Mitsubishi CM1200DW-34T

Mitsubishi CM1200DW-34T

Overview

The Mitsubishi CM1200DW-34T is a dual IGBT power module designed for high-voltage applications. With a 1200 A current capacity and 1700 V blocking voltage, it incorporates Mitsubishi’s advanced trench-gate IGBT technology for low conduction losses and rapid switching. Its insulated baseplate and chassis mount structure ensure dependable performance in challenging industrial conditions.

Key Features

• Dual IGBT half-bridge module

• 1200 A collector current

• 1700 V collector-emitter blocking voltage

• Trench-gate IGBT design for reduced VCE(sat)

• Integrated fast-recovery diodes

• Insulated baseplate for improved heat dissipation

• Durable chassis mount for industrial strength

• Compatible with very high-voltage systems

Technical Specifications

• Part Number: CM1200DW-34T

• Configuration: Dual IGBT with free-wheeling diodes

• Collector Current: 1200 A

• Collector-Emitter Voltage: 1700 V

• VCE(sat): ~2.1–2.3 V @ rated current

• Gate-Emitter Voltage: ±20 V

• Thermal Resistance (Junction-Case): ~0.015 °C/W

• Switching Speed: High

• Mounting Type: Chassis mount (isolated base)

• Operating Temperature: –40 °C to +150 °C

• Package Type: Industrial IGBT module

• Weight: Approx. 1.8–2.2 kg

Applications

• High-voltage industrial drives

• Railway traction inverters

• High-capacity wind and solar inverters

• HVDC and power grid converters

• Heavy industrial automation and control

Why Choose the CM1200DW-34T

• Provides 1200 A at 1700 V for high-voltage performance

• Mitsubishi’s trusted trench-gate IGBT architecture

• Superior switching efficiency and thermal stability

• Designed for robust, high-demand applications

• Perfect for use in power grids and transportation systems

Order Now

The Mitsubishi CM1200DW-34T IGBT module is in stock and available for global shipping.

This product is part of our Mitsubishi IGBT Modules series, crafted for high-efficiency power conversion and consistent performance in industrial automation.

Explore the Power Electronics Components section to discover diodes, thyristors, GTOs, MOSFETs, and other semiconductor solutions