Mitsubishi CM150E3U-12H

Mitsubishi CM150E3U-12H

Overview

The Mitsubishi CM150E3U-12H is a single IGBT power module rated for 150 A and 600 V, providing high-speed switching and low conduction losses. Designed with a low-saturation voltage structure and insulated baseplate, this module is perfect for compact, high-efficiency power electronics. Its sturdy chassis mount package ensures long-term reliability in industrial settings.

Key Features

• Single IGBT configuration

• Collector current: 150 A

• Collector-emitter voltage: 600 V

• Low VCE(sat) for high efficiency

• Integrated free-wheeling diode

• Insulated baseplate for optimized heat dissipation

• Sturdy chassis mount construction

• Compact and reliable for OEM and retrofit systems

Technical Specifications

• Part Number: CM150E3U-12H

• Configuration: Single IGBT with diode

• Collector Current: 150 A

• Collector-Emitter Voltage: 600 V

• VCE(sat): ~2.0 V at rated current

• Gate-Emitter Voltage: ±20 V

• Thermal Resistance (Junction-Case): ~0.18 °C/W

• Switching Speed: Fast

• Mounting Type: Chassis mount (isolated base)

• Operating Temperature: –40 °C to +150 °C

• Package Type: Power module

• Weight: Approx. 250–300 g

Applications

• General-purpose inverters

• Motor drives and robotics

• Industrial welding machines

• UPS and backup power systems

• Automation control systems

Why Choose the CM150E3U-12H

• Efficient and compact IGBT for 600 V applications

• Mitsubishi’s trusted semiconductor quality

• Reliable thermal design with insulated base

• Easy to integrate in compact enclosures

• Long-lasting performance in industrial conditions

Order Now

The Mitsubishi CM150E3U-12H IGBT module is available and ships worldwide.

This product belongs to our Mitsubishi IGBT Modules collection, created for high-efficiency power conversion and reliable performance in industrial automation.

Explore the Power Electronics Components main category to discover diodes, thyristors, GTOs, MOSFETs, and other semiconductor solutions.