Mitsubishi CM300DY-24A

Mitsubishi CM300DY-24A

Overview

The CM300DY-24A is a high-efficiency dual IGBT module from Mitsubishi Electric. With a rating of 300 A and 1200 V, it includes trench-gate technology and integrated free-wheeling diodes. Designed for power electronics applications such as inverters, UPS, motor drives, and other industrial systems requiring high currents and voltages.

Key Features

• Dual IGBTs with fast-recovery diodes

• Rated voltage: 1200 V

• Rated current: 300 A continuous

• Trench-gate structure for high efficiency and fast switching

• Low VCE(sat) for reduced conduction loss

• Insulated baseplate for simplified thermal integration

• Chassis-mountable design for secure installation

• Industrial-grade durability

Technical Specifications

• Part Number: CM300DY-24A

• Configuration: Dual IGBT in half-bridge

• Collector Current (Ic): 300 A (continuous)

• Collector-Emitter Voltage (Vces): 1200 V

• Saturation Voltage (VCE(sat)): ~2.1 V at 300 A

• Gate-Emitter Voltage (VGE): ±20 V max

• Power Dissipation: ~1890 W (at 25 °C case temperature)

• Thermal Resistance (Rth): IGBT ~0.066 °C/W

• Operating Temperature: –40 °C to +150 °C

• Isolation Voltage: 2500 V RMS

• Mounting: Chassis with insulated base

• Weight: Approx. 280 g

Applications

• Industrial AC motor drives

• Uninterruptible Power Supplies (UPS)

• Renewable energy inverters

• Welding equipment

• High-power conversion systems

Why Choose the CM300DY-24A

• High current capacity in compact form

• Excellent switching performance

• Mitsubishi’s proven reliability

• Easy installation with standard chassis mount

• Ideal for demanding industrial environments

Order Now

The Mitsubishi CM300DY-24A IGBT module is available and ships worldwide.

This product is part of our Mitsubishi IGBT Modules collection, designed for high-efficiency power conversion and reliable performance in industrial automation. Explore our full range of Mitsubishi IGBT Modules.

Explore the Power Electronics Components main category to discover diodes, thyristors, GTOs, MOSFETs, and other semiconductor solutions.