Mitsubishi CM900DU-24NF

Mitsubishi CM900DU-24NF

Overview

The Mitsubishi CM900DU-24NF is a high-power IGBT module with dual transistor setup, made for heavy-duty industrial applications. With 900 A current and 1200 V capacity, this module uses trench-gate technology and built-in fast recovery diodes to provide efficient switching, low power loss, and excellent thermal performance.

Key Features

• Dual IGBT half-bridge module

• Collector current: 900 A

• Collector-emitter voltage: 1200 V

• Trench-gate IGBT structure

• Integrated fast-recovery diodes

• Insulated baseplate for improved thermal transfer

• Rugged chassis mount package

• Designed for high-current industrial usage

Technical Specifications

• Part Number: CM900DU-24NF

• Configuration: Dual IGBT

• Collector Current: 900 A (continuous)

• Collector-Emitter Voltage: 1200 V

• VCE(sat): ~2.0–2.2 V @ rated current

• Gate-Emitter Voltage: ±20 V

• Switching Speed: Fast

• Thermal Resistance (Junction-Case): ~0.025 °C/W

• Mounting Type: Chassis mount (insulated)

• Operating Temperature: –40 °C to +150 °C

• Package Type: High-power IGBT module

• Weight: Approx. 800–900 g

Applications

• High-capacity inverters and drives

• Industrial automation and robotics

• Traction and railway systems

• Wind and solar power converters

• Large-scale UPS and energy systems

Why Choose the CM900DU-24NF

• Massive 900 A current rating with 1200 V blocking voltage

• Excellent efficiency and thermal performance

• Mitsubishi quality and long-term reliability

• Suitable for the most demanding power applications

• Simplified mounting with insulated baseplate

Order Now

The Mitsubishi CM900DU-24NF IGBT module is available and ready for worldwide shipping.

This product is part of our Mitsubishi IGBT Modules collection, designed for high-efficiency power conversion and reliable performance in industrial automation.

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